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arXiv:1702.06498v1 [cond-mat.mtrl-sci] 21 Feb 2017
arXiv:1702.06498v1 [cond-mat.mtrl-sci] 21 Feb 2017

Interface characterization of atomic layer deposited Al2O3 on m-plane GaN
Interface characterization of atomic layer deposited Al2O3 on m-plane GaN

Interfacial thermal stability and band alignment of Al2O3/HfO2/Al2O3/Si  gate stacks grown by atomic layer deposition - ScienceDirect
Interfacial thermal stability and band alignment of Al2O3/HfO2/Al2O3/Si gate stacks grown by atomic layer deposition - ScienceDirect

Energy-band diagram configuration of Al2O3/oxygen-terminated p-diamond  metal-oxide-semiconductor: Applied Physics Letters: Vol 107, No 14
Energy-band diagram configuration of Al2O3/oxygen-terminated p-diamond metal-oxide-semiconductor: Applied Physics Letters: Vol 107, No 14

Band gap structure modification of amorphous anodic Al oxide film by  Ti-alloying
Band gap structure modification of amorphous anodic Al oxide film by Ti-alloying

IETS spectrum and trap energy level within the Al2O3 band gap. (a)... |  Download Scientific Diagram
IETS spectrum and trap energy level within the Al2O3 band gap. (a)... | Download Scientific Diagram

Band Offset Measurements in Atomic-Layer-Deposited Al2O3/Zn0.8Al0.2O  Heterojunction Studied by X-ray Photoelectron Spectroscopy
Band Offset Measurements in Atomic-Layer-Deposited Al2O3/Zn0.8Al0.2O Heterojunction Studied by X-ray Photoelectron Spectroscopy

1 Electronic and Optical Properties of γ- and θ- Alumina by First Principle  Calculations Ahmed S. Jbara1, 2, 3, *, Zulkafli Ot
1 Electronic and Optical Properties of γ- and θ- Alumina by First Principle Calculations Ahmed S. Jbara1, 2, 3, *, Zulkafli Ot

Energy-band alignment of atomic layer deposited (HfO<sub>2</sub>)<sub><em>  x</em></sub>(Al<sub>2</sub>O<sub>3</sub>)<sub>1 − <em> x</em></sub> gate  dielectrics on 4H-SiC<xref ref-type="fn" rid="cpb142427fn1">*</xref>
Energy-band alignment of atomic layer deposited (HfO<sub>2</sub>)<sub><em> x</em></sub>(Al<sub>2</sub>O<sub>3</sub>)<sub>1 − <em> x</em></sub> gate dielectrics on 4H-SiC<xref ref-type="fn" rid="cpb142427fn1">*</xref>

Verification of Charge Transfer in Metal-Insulator-Oxide Semiconductor  Diodes via Defect Engineering of Insulator | Scientific Reports
Verification of Charge Transfer in Metal-Insulator-Oxide Semiconductor Diodes via Defect Engineering of Insulator | Scientific Reports

Elucidating the high-k insulator α-Al2O3 direct/indirect energy band gap  type through density functional theory computations - ScienceDirect
Elucidating the high-k insulator α-Al2O3 direct/indirect energy band gap type through density functional theory computations - ScienceDirect

Elucidating the high-k insulator α-Al2O3 direct/indirect energy band gap  type through density functional theory computations - ScienceDirect
Elucidating the high-k insulator α-Al2O3 direct/indirect energy band gap type through density functional theory computations - ScienceDirect

Interpretation of the Changing the Band Gap of Al2O3 Depending on Its  Crystalline Form: Connection with Different Local Symmetri
Interpretation of the Changing the Band Gap of Al2O3 Depending on Its Crystalline Form: Connection with Different Local Symmetri

Band diagram of the TiO2/MAPbI3 and Al2O3/MAPbI3 interfaces,... | Download  Scientific Diagram
Band diagram of the TiO2/MAPbI3 and Al2O3/MAPbI3 interfaces,... | Download Scientific Diagram

The stability of aluminium oxide monolayer and its interface with  two-dimensional materials | Scientific Reports
The stability of aluminium oxide monolayer and its interface with two-dimensional materials | Scientific Reports

Interpretation of the Changing the Band Gap of Al2O3 Depending on Its  Crystalline Form: Connection with Different Local Symmetri
Interpretation of the Changing the Band Gap of Al2O3 Depending on Its Crystalline Form: Connection with Different Local Symmetri

BALD Engineering - Born in Finland, Born to ALD: Study on band-gaps of a  variety of classic ALD high-k´s via REELS
BALD Engineering - Born in Finland, Born to ALD: Study on band-gaps of a variety of classic ALD high-k´s via REELS

Band offsets at amorphous-crystalline Al2O3–SrTiO3 oxide interfaces
Band offsets at amorphous-crystalline Al2O3–SrTiO3 oxide interfaces

Valence band offsets for ALD SiO2 and Al2O3 on (InxGa1−x)2O3 for x =  0.25–0.74
Valence band offsets for ALD SiO2 and Al2O3 on (InxGa1−x)2O3 for x = 0.25–0.74

Interpretation of the Changing the Band Gap of Al2O3 Depending on Its  Crystalline Form: Connection with Different Local Symmetries | The Journal  of Physical Chemistry C
Interpretation of the Changing the Band Gap of Al2O3 Depending on Its Crystalline Form: Connection with Different Local Symmetries | The Journal of Physical Chemistry C

Energy band gaps for -Al2O3, r-TiO2, m-ZrO2 and m-HfO2 calculated with...  | Download Scientific Diagram
Energy band gaps for -Al2O3, r-TiO2, m-ZrO2 and m-HfO2 calculated with... | Download Scientific Diagram

Band alignment and interfacial structure of ZnO/Si heterojunction with Al2O3  and HfO2 as interlayers: Applied Physics Letters: Vol 104, No 16
Band alignment and interfacial structure of ZnO/Si heterojunction with Al2O3 and HfO2 as interlayers: Applied Physics Letters: Vol 104, No 16

Figure 5 from Band Gap and Band Offset of Ga2O3 and (AlxGa1−x)2O3 Alloys |  Semantic Scholar
Figure 5 from Band Gap and Band Offset of Ga2O3 and (AlxGa1−x)2O3 Alloys | Semantic Scholar

a) Schematic band gap diagram of the n -GaN /Al2O3/ p -ZnO structure.... |  Download Scientific Diagram
a) Schematic band gap diagram of the n -GaN /Al2O3/ p -ZnO structure.... | Download Scientific Diagram

Band gap structure modification of amorphous anodic Al oxide film by  Ti-alloying
Band gap structure modification of amorphous anodic Al oxide film by Ti-alloying

Figure 2 from Photochemistry of the α-Al2O3-PETN Interface | Semantic  Scholar
Figure 2 from Photochemistry of the α-Al2O3-PETN Interface | Semantic Scholar

Band diagram of the TiO2/MAPbI3 and Al2O3/MAPbI3 interfaces,... | Download  Scientific Diagram
Band diagram of the TiO2/MAPbI3 and Al2O3/MAPbI3 interfaces,... | Download Scientific Diagram

Band Offset Measurements in Atomic-Layer-Deposited Al2O3/Zn0.8Al0.2O  Heterojunction Studied by X-ray Photoelectron Spectroscopy
Band Offset Measurements in Atomic-Layer-Deposited Al2O3/Zn0.8Al0.2O Heterojunction Studied by X-ray Photoelectron Spectroscopy